Abstract: The radiation response and long term recovery in MOS due to a pulse radiation are studied.It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.The model uses convolution theory and considers the bias change in the recovery period.It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.

Key words: ionizing radiation, interface state, annealing, simulation