CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2004, Vol. 21 ›› Issue (3): 373-376.

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Electronic Structure of Ca3Co2O6 and Ni-doped Ones

MIN Xin-min, ZHU Lei, XING Xue-lingnd   

  1. Processing, Wuhan University of Technology, Wuhan 430070, China
  • Received:2003-03-17 Revised:2003-09-11 Online:2004-05-25 Published:2004-05-25

Abstract: The electronic structures of Ca3Co2O6 and Ni-doped ones are calculated using density functional and discrete variation method (DFT-DVM).The relation between electronic structure,chemical bond and thermoelectric property is discussed.The results indicate that the highest valence band (HVB) and the lowest conduction band (LCB)are mainly contributed from Co3d,Ni3d and O2p atomic orbitals.The property of semiconductor is shown from the gap between HVB and LCB.The gap of Ni-doped ones is less than that of Ca3Co2O6.The covalent and ionic bonds of Ni-doped ones are both weaker than those of Ca3Co2O6.The thermoelectric property may be improved from adding Ni element into the system of Ca3Co2O6.

Key words: cobaltite, electronic structure, chemical bond, thermoelectric property

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