CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2000, Vol. 17 ›› Issue (4): 449-454.

Previous Articles     Next Articles

INFLUENCE OF SURFACE TRENCH ON UNIFORMITY OF PLASMA IMMERSION ION IMPLANTATION

ZENG Zhao-ming1, TANG Bao-yin1, WANG Song-yan1, TIAN Xiu-bo1, LIU Ai-guo1, WANG Xiao-feng1, CHU Paul K2   

  1. 1. National Key Laboratory of Advanced Welding Production Technology, Harbin Institute of Technology, Harbin 150001, P R C China;
    2. Dept of Physics and Materials Sciences, City University of Hong Kong, KowLoon, Hong Kong
  • Received:1998-06-08 Revised:1999-07-24 Online:2000-07-25 Published:2000-07-25

Abstract: The sheath expansion around a planar target with an arc trench during plasma immersion ion implantation(PⅢ) is simulated numerically with a two-dimensional fluid model.The sheath potential,ion velocity and ion density during sheath expanding are calculated.The distribution of ion incident angle and dose along the target surface is presented.It provides the theoretical base for treatment of the targets with complicated shape using plasma immersion ion implantation.

Key words: plasma immersion ion implantation, sheath, numerical simulation

CLC Number: