CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2014, Vol. 31 ›› Issue (4): 486-494.

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A Comparative Study on Structure and Electronic Properties of ZnO/ZnS Heteronanowires

CHEN Hongxia1,2, XIE Jianming1   

  1. 1. College of Physical Science and Electronic Techniques, Yancheng Teachers University, Yancheng 224002, China;
    2. Department of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
  • Received:2013-02-27 Revised:2013-08-12 Online:2014-07-25 Published:2014-07-25
  • Supported by:
    Supported by Natural Science Foundation of China(11247235);Natural Science Foundation of Jiangsu Higher Education (11KJB140013) and Qing Lan Project (QLP)

Abstract: We study systematically structural and electronic properties of ZnO/ZnS superlattice nanowires and core-shell structural ZnO/ZnS nanowires with first-principles calculations. Relaxed structures of these heterostructural nanowires are found similar to those of homogeneous ZnO and ZnS nanowires. Band structures of heteronanowires show that they are direct-band gap semiconductors. For ZnO/ZnS superlattice nanowires, bands become flatter with the formation of minibands. For core-chell ZnO/ZnS nanowires, PDOS show that they are type-Ⅱ heterostructures. These may be important in understanding structural and electronic properties of heterostructural nanowires and their utilization in electric generator and photovoltaic devices.

Key words: density functional theory, heteroanowire, structure, electronic property

CLC Number: