CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2016, Vol. 33 ›› Issue (5): 554-560.

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Adsorbing of Magnesium on Phosphorus-Doping Single-Walled Silicon Nanotubes: First-principles Study

ZHOU Shuang, LIU Guili, JIANG Yan, SONG Yuanyuan   

  1. College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang 110870, China
  • Received:2015-11-30 Revised:2016-03-02 Online:2016-09-25 Published:2016-09-25

Abstract: Adsorption characteristics of magnesium atoms on phosphorus-doped single-walled silicon nanotubes (SWSiNTs) are studied using plane wave pseudopotential method with generalized gradient approximation based on density functional theory. Adsorption energies of magnesium atoms on pure,phosphorus-doped and deformation effects (compressive or tensile) (6,6) SWSiNTs are calculated. Bond and Mulliken population of both pure and phosphorus-doped SWSiNTs are also analyzed.It shows that covalent bond and ionic bond conexist in armchair silicon nanotube superlattices doped with phosphorus atoms by forming ionic bond of Mg-P and Si-P,and enhancing ionic bond of Si-Si. Adsorption energy of Mg atom on SWSiNTs are improved significantly by doping phosphorus atoms. Adsorption energy are also increased under compressive deformation at 0.25%,0.50%,1.00%,1.25% and tensile deformation at 1.00%,1.25%. It enhances adhesion of interface of silicon nanotubes as reinforce combined with matrix.

Key words: first-principles, single-walled silicon nanotubes, phosphorus-doping, adsorption of magnesium atom

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