Abstract: A scalable parallel algorithm for three-dimensional semiconductor device simulation on unstructured tetrahedral meshes using drift-diffusion model is proposed,which is characterized by finite volume discretization,fully coupled Newton iterations for discretized nonlinear equations,and GMRES iterations using algebraic multigrid(AMG) preconditioner for linear equations in Newton iterations.The algorithm was implemented using a parallel adaptive finite element toolbox PHG.Large scale parallel numerical experiments with several problems,including PN diode and MOSFET,were carried out.In numerical simulations the largest mesh size are 500 million elements and the largest number of MPI processes used are 1 024.It shows that the proposed algorithm is efficient,robust and highly scalable.

Key words: semiconductor device, drift-diffusion, finite volume, 3D parallel simulation, algebraic multigrid