导航切换
CJCP
Home
About Journal
About Journal
Information
Aims & Scopes
Journal History
Editorial Board
Editorial Board
Successive Editorial Board
Authors
Guidelines for Authors
Authors Login
Download
Online First
Reviewers
Peer Review
Editor Work
Editor-in-chief
Guidelines for Reviewers
FAQ
FAQ
Contacts us
中文
Journals
Publication Years
Keywords
Search within results
(((CHEN Yu-sheng[Author]) AND 1[Journal]) AND year[Order])
AND
OR
NOT
Title
Author
Institution
Keyword
Abstract
PACS
DOI
Please wait a minute...
For Selected:
Download Citations
EndNote
Ris
BibTeX
Toggle Thumbnails
Select
The Application of CPML in Three-dimensional Numerical Simulation of Low-altitude Electromagnetic Pulse
GAO Chun-xia, CHEN Yu-sheng, WANG Liang-hou
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS 2005, 22 (
4
): 292-298.
Abstract
(
243
)
PDF
(314KB)(
1066
)
Knowledge map
According to the characteristics of perfectly matched layers (PML), a convolutional PML (CPML) is chosen to truncate open boundaries used in the numerical simulation of low-altitude electromagnetic pulse. On the basis of the split-field PML and the plane-wave solution of electromagnetic field in a free space, an unsplit-field PML is constructed. With convolutional theorem in the Fourier transformation, discerete iterative equations of electromagnetic field components in the CPML media are presented in three-dimensional prolate-spheroidal coordinate system. The effectiveness of the method in numerical simulation of nuclear electromagnetic pulse is shown.
Related Articles
|
Metrics
Select
Numerical Simulation of Heavy Ion Microbeam for Effects of Single Event Upset and Single Event Burnout
GUO Hong-xia, CHEN Yu-sheng, ZHOU Hui, HE Chao-hui, GENG Bin, LI Yong-hong
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS 2003, 20 (
5
): 434-438.
Abstract
(
283
)
PDF
(238KB)(
1126
)
Knowledge map
Effects of SEU and SEB are simulated with 0.4μm diameter microbeam. SEU for drain region of MOSFET and CMOS SRAM are calculated. Collective charge depending on LET for specific device structure is calculated for different ions. LET and critical charge are provided. SEB for VDMOS is simulated and electric field, potential line, current, rate of impact ionization are given at different times along ion tracks. It is very important for heavy microbeam test physics models which have been set up.
Related Articles
|
Metrics
Select
Brief Introduction of MEDICI Software and Its Application in Ionization Radiation Effects
GUO Hong-xia, CHEN Yu-sheng, ZHOU Hui, ZHANG Yi-men, GONG Ren-xi, LÜ Hong-liang
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS 2003, 20 (
4
): 372-376.
Abstract
(
240
)
PDF
(251KB)(
1280
)
Knowledge map
The MEDICI software of two dimensional simulation of semiconductor device is briefly introduced.Its characteristics and use are described.With the help of MEDICI,effects of total dose for MOSFET and dose rate for pn junction are simulated.Their physical models are set up.A theory approach is provided for the research of ionization radiation effects.
Related Articles
|
Metrics
Select
Effects of the HOB and the Burst Yield on the Properties of NEMP
MENG Cui, CHEN Yu-sheng, ZHOU Hui
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS 2003, 20 (
2
): 173-177.
Abstract
(
360
)
PDF
(219KB)(
1407
)
Knowledge map
Finite difference method is used to simulate the physical process numerically during which the electromagnetic signal is generated by the interaction of nuclear-explosion-induced currents with the geomagnetic field. The EMP waveforms above burst point are researched. The earth-based coordinates and the local spherical coordinates are introduced to illustrate propagating properties of the nuclear electromagnetic pulse along the orbit direction of satellites with various explosion height and yield. Taking into account the attenuation and dispersion of the ionospheric plasma, the FFT method is used to extrapolate the strength of the DEMP. With cosmic noise considered, the peak electric field strength with the yield over 1 kt could be detected at a distance of 10
4
km.
Related Articles
|
Metrics
Select
NUMERICAL SIMULATION OF SECONDARY ELECTRON BEHAVIOR NEAR THE SURFACE OF IRRADIATED CONDUCTOR
ZHOU Hui, CHENG Yin-hui, LI Bao-zhong, CHEN Yu-sheng
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS 2000, 17 (
S1
): 121-125. DOI:
10.3969/j.issn.1001-246X.2000.01.021
Abstract
(
288
)
PDF
(166KB)(
1286
)
Knowledge map
The finite difference and PIC method are used to simulate the behavior of secondary electrons stimulated by primary X-ray photoelectrons. The results are given for the air pressure below 1 Pa and the plasma effects of low energy secondary electrons to the irradiated conductor are discussed as well.
Related Articles
|
Metrics
Select
THE NUMERICAL SIMULATION OF THE DIODE REGION AFFECTING ON THE VIRCATOR
MENG Cui, CHEN Yu-sheng, LIU Guo-zhi
CHINESE JOURNAL OF COMPUTATIONAL PHYSICS 2000, 17 (
S1
): 102-106. DOI:
10.3969/j.issn.1001-246X.2000.01.018
Abstract
(
273
)
PDF
(204KB)(
1099
)
Knowledge map
It develops a two-dimensional,fully electromagnetic,relativistic FDTD computer code combined with the PIC method.The physical process of the vircator that electrons are emitted from cathode is simulated.The effects of applied voltage and reflected electrons from the vircator to the diode region are studied preliminarily.
Related Articles
|
Metrics