A mixed Monte Carlo algorithm for transport with electrons of energy from 50 eV to 1 GeV is described which combines detailed simulation and condensed simulation.Through adjusting scattering angle and energy loss factors,times of single collisions are decided.In the process,single collisions are simulated with detailed method,and multiple scatterings among single collisions are simulated with condensed method.Results and efficiency of calculation affected by factors mentioned above are discussed.Backscattering on solids induced by incident electrons is simulated.Calculated backscattering coefficients and energy distribution agree with theoretical and experimental results well.

Backscattering coefficients of low energy electron beams(from 100 eV to(10 000) eV) impinging on solids(Au,Si and Al) are simulated with detailed Monte Carlo code in which all interaction experienced by single electron are simulated in chronological succession.Mott cross-section and atomic generalized-oscillator-strength model within Born approximation are used to calculate elastic and inelastic scatterings in solid,respectively.Compared with various Monte Carlo codes it is concluded that detailed Monte Carlo code provided better agreement with experimental results at electron energies less than 10 keV.

The description of production and transient of photocurrent in semiconductor devices in ionzinong radiation environment is of great importance for Transient Radiation Effects on Electronics Systems(TREES). Physical models of generic description of photocurrent in semiconductors are proposed hare, photocurrent of an actual pn junction has been simulated numerically, and the simulation results are also presented.