Abstract: A gas-phase elementary-reaction mechanism of diamond growth by a vapor depostion process is proposed. The rate constants for-all reactions included in the model have been computed using the species and their transition-state parameters predicted by molecular orbital ab intio at HF/6-31G^* level The calculated results quantitatively agree with experimental data on the concentration of gas-phase species and substrate temperature.

Key words: Diamond Film, Abstraction of H, MO ab initio, kinetics, main growth species, substrate temperature