CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 2013, Vol. 30 ›› Issue (6): 943-948.

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Electron Transport in Silicon Nanoscale Junctions

LIU Futi1,2, CHENG Yan2, YANG Fubin2, CHENG Xiaohong1, CHEN Xlangrong2   

  1. 1. College of Physics and Electronic Engineering, Yibin University, Yibin 644000, China;
    2. College of Physical Science and Technology, Sichuan University, Chengdu 610064, China
  • Received:2013-01-06 Revised:2013-05-26 Online:2013-11-25 Published:2013-11-25

Abstract: Electron transport in a linear atomic chain composed of 3 silicon atoms and sandwiched between gold electrodes is investigated with combination of density functional theory and non-equilibrium Green's function method. Relationship of conductance with distance is calculated. It shows that:At a distance of 1.584 nm, binding energy of junctions is minimum, structure is the most stable, Si-Si bond length is 0.216 nm, Si-Au bond length is 0.227 nm, conductance is 0.729 G0(G0=2e2/h), electron transport channels mainly consist of px, py orbital electrons of Si atoms. With increase of voltage conductance decreases and I-V curve of nanoscale junctions at equilibrium position shows linear feature.

Key words: density functional theory, non-equilibrium green function, silicon nanoscale junctions, electron transport

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