For physical process of holes trapped in oxide and interface trap buildup induced by proton,physical models of oxide trapped charge and interface trap charge in partially depleted SOI transistors after ionizing radiation exposure are proposed.Relations between oxide trapped charge density or interface trap charge density and radiation dose are described well.These models are validated by radiation experiments.It shows that within confines of experimental dose,oxide trapped charge density induced by radiation rays depends negative exponential on radiation dose.Results for high total dose as annealing is taken into account exhibits excellent agreement with experimental data.Interface trap charge density induced by radiation rays is linear in dose within confines of experimental dose.

The radiation response and long term recovery in MOS due to a pulse radiation are studied.It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post-irradiation recovery.The model uses convolution theory and considers the bias change in the recovery period.It shows that the bias in the post-irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate.