In this work, water adsorbed in single-walled carbon nanotube (SWCNT) is simulated by the Grand Canonical Monte Carlo (GCMC) method. The effects of pore length, pore size and surface strength on water adsorption behaviors at 298 K are systematically studied, via the characterization of isotherms, local density distribution and isosteric heat. There are hysteresis loops observed for water adsorbed and desorbed in SWCNTs with relatively large pore radii (PR=0.8, 1.0 nm), and the hysteresis loop disappears as the pore radius decreases to 0.55 nm. In addition, the water molecule packing manners are in the arrangement form of single chain, double helix chain and water clusters due to the pore size effects. When the pore length is in the range of 4~8 nm, the initial adsorption pressure becomes smaller and smaller as the pore length increases, but this effect rule gradually disappears with increasing pore length to 10 nm. Finally, the initial pressure of water adsorption decreases with surface strength; and when surface strengths are 20, 28, 32 K, the capillary evaporation phase transitions completed instantaneously. While the surface strength increases to 40 K, the capillary evaporation phase transition is shown gradually desorbed steps. As surface strengths increased from 20 K to 40 K, the isosteric adsorption heat at the pressure points of capillary condensation phase transition is 127.47, 117.98, 84.04, 59.16 kJ·mol^-1, respectively.

We investigate collective dynamics of memristor Rulkov neural networks depend on electrical synapses and chemical synapses. It is found that for two memristive Rulkov neurons, the system can be synchronized regardless of coupling mode. At different coupling strengths, the neurons present different firing patterns, such as square wave, triangular wave, pulse firing, etc. As electrical synapses and chemical synapses coexist, synchronization of the system is more dependent on the strength of electrical coupling. Synchronization of globally coupled memristive Rulkov neural networks is studied. It is shown that as chemical synapses act alone, synchronization occurs within a certain region of coupling parameters. The synchronization is disrupted as the chemical coupling strength exceeds a certain threshold. As electrical synapses act alone, the system can reach a synchronized state quickly. It is also found that electrical coupling strength is the key factor to determine whether neurons are at rest or firing. As electrical coupling strength increases, firing frequency and amplitude of neuron increase. As electrical and chemical couplings coexist, the increase of coupling strength makes the neurons turn into arc discharge and reach synchronization. It provides a possible way to control firing patterns and synchronization of neural networks by adjusting coupling pattern and coupling strength.

The stimulated Brillouin scattering for a bundle beam, which consists of several laser beams, is studied by using the three-dimensional large scale laser plasma interaction code (LAP3D). Several collective scattering, including the ray-retracing, shared ion acoustic wave, shared scattering light, are observed. These phenomena are explained in different parameters.

Finding ways to suppress stimulated Raman scattering(SRS) and stimulated Brillouin scattering(SBS) is an important subject in inertial confinement fusion(ICF). Under the typical laser fusion plasma conditions, the effects of transverse magnetic field and laser bandwidth on the suppression of SRS and SBS are studied by utilizing the particle-in-cell(PIC) program. It is found that the transverse magnetic field can significantly inhibit the autoresonance of SRS in the non-uniform plasma. The transverse magnetic field accelerates the electrons trapped in the electron plasma wave(EPW) excited by SRS, which causes the nonlinear damping and reduces the nonlinear frequency shift of the EPW, thus narrowing the autoresonance space and significantly reducing the SRS reflectivity. Based on the characteristics that SRS can be suppressed by a transverse magnetic field and the SBS growth is sensitive to the laser bandwidth, a scheme is proposed that utilizing the transverse magnetic field and the broadband laser to suppress SRS and SBS simultaneously. When the transverse magnetic field is on the order of 10 T and the bandwidth is on the order of 0.001, both of which are easy to achieve in experiments, the total reflectivity of SRS and SBS can be effectively suppressed in the ICF-related plasmas.

To describe accurately the dynamic physical process and obtain quantitatively boron (B) spatial distribution as well as it's evolution behaviors in silicon (Si) under boron implantation, we built a multiscale dynamic model of charged defects. In the model, multiple microscopic processes of defects generation and evolution are comprehensively considered under B ion implantation, including charge states of defects and reactions among charged defects, evolution of B-interstitial clusters (BICs) and interactions between charged defects and carriers. The simulated B distribution is consistent with experiments. It shows that BICs dominate the depth distribution of B concentration and interstitial B (B_I) makes B distribution extend into depth. Besides, considering charge states of defects, we correct diffusion coefficients of Si interstitials (I) and B_I so that the behavior of B distribution can be described accurately. The model reveals real physical processes and micro-mechanisms in Si under B implantation, which demonstrates that BICs and real charge states of defects are the key in describing B distribution. It provides theoretical guidance for semiconductor device fabrication.