计算物理 ›› 1996, Vol. 13 ›› Issue (4): 439-444.

• 论文 • 上一篇    下一篇

金刚石薄膜生长条件气相反应的动力学分析

董夏兰1, 李延欣2, 孙家钟1   

  1. 1. 吉林大学理论化学研究所, 长春 130023;
    2. 吉林大学原子与分子物理研究所, 长春 130023
  • 收稿日期:1995-03-09 修回日期:1996-07-28 出版日期:1996-12-25 发布日期:1996-12-25
  • 基金资助:
    吉林大学理论化学计算国家重点室验室;国家自然科学基金和国家基础研究重大关键性项目的资助

KINETIC STUDIES ON THE GAS-PHAS ELEMENTARY REACTIONS IN CVD DIAMOND FILM ENVIREMENT

Dong Xialan1, Li Yanxin2, Sun Jiazhong1   

  1. 1. Institute of Theoretical Chemistry. Jilin University, Changchun, 130023, P. R. China;
    2. Institute of Atomic and Molecular Physics. Jilin University, Changchun, 130023, P. R. China
  • Received:1995-03-09 Revised:1996-07-28 Online:1996-12-25 Published:1996-12-25

摘要: 建立一个金刚石薄膜生长条件下气相反应的化学模型,并对之进行了基于第一原理的动力学反应速度常数计算。结果表明,该模型所预言的气相浓度分布与实验定性一致,温度下限与实验的衬底表面温度定量一致

关键词: 金刚石薄膜, 氢剥离, 从头算, 动力学分析, 衬底温度, 主要生长质

Abstract: A gas-phase elementary-reaction mechanism of diamond growth by a vapor depostion process is proposed. The rate constants for-all reactions included in the model have been computed using the species and their transition-state parameters predicted by molecular orbital ab intio at HF/6-31G* level The calculated results quantitatively agree with experimental data on the concentration of gas-phase species and substrate temperature.

Key words: Diamond Film, Abstraction of H, MO ab initio, kinetics, main growth species, substrate temperature

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