静电场对SmC*相液晶作用的计算研究

计算物理 ›› 1999, Vol. 16 ›› Issue (3): 316-320.

静电场对SmC^*相液晶作用的计算研究

钱祥忠

淮南工业学院数理系, 安徽 232001

收稿日期:1997-03-24 修回日期:1998-10-08 出版日期:1999-05-25 发布日期:1999-05-25
作者简介:钱祥忠,男,36,硕士,副教授
基金资助:
煤炭院校优秀青年科学基金资助的课题

Calculation of the action of static electric field on SmC^* liquid crystals

Qian Xiangzhong

Department of Mathematics and Physics, Huainan institute of Technology, 232001

Received:1997-03-24 Revised:1998-10-08 Online:1999-05-25 Published:1999-05-25

摘要/Abstract

摘要： 采用自洽模拟方法,计算研究了分子层面内的静电场对SmC^*相液晶螺旋结构和铁电特性的影响。结果表明,SmC^*相液晶的螺距和极化强度平均值随场强增大而增大,且越接近阈值电场增大越快;指向矢倾斜角和分子取向序参量随场强增大而缓慢增大;阈值电场与液晶的本征螺距和自发极化强度有关,并随温度升高而减小。

关键词: SmC^*相液晶, 静电场, 自洽模拟

Abstract: The effect of static electric field in smectic layer plane on the helic structure and ferroelectrics of SmC^* liquid crystals is studied by the self-consistent simulation method. The results show that the helic pitch and the average of polarization increase with field strength, the closer to the threshold field, the faster they increase, the tilt angle of director and molecular orientional order parameter increase slowly with field strength and the threshold field decreases with temperature and is related to the helic pitch and polarization without external field.

Key words: SmC^* liquid crystals, static electric field, self-consistent simulation

中图分类号:

O753
O242

钱祥忠. 静电场对SmC^*相液晶作用的计算研究[J]. 计算物理, 1999, 16(3): 316-320.

Qian Xiangzhong. Calculation of the action of static electric field on SmC^* liquid crystals[J]. CHINESE JOURNAL OF COMPUTATIONAL PHYSICS, 1999, 16(3): 316-320.

[1]	王超, 王发杰, 谷岩, 王晓. 基于局部基本解法的静电场仿真分析[J]. 计算物理, 2021, 38(5): 612-622.
[2]	唐秋明, 高强. 风沙流对高压绝缘子电位和电场分布的影响[J]. 计算物理, 2016, 33(5): 539-546.
[3]	何锃, 吕浚潮, 戴呈豪. 新型快速多极边界元法求解电荷任意分布的二维静电场[J]. 计算物理, 2007, 24(4): 433-438.
[4]	李亚莎, 王泽忠, 卢斌先. 三维静电场线性插值边界元中的解析积分方法[J]. 计算物理, 2007, 24(1): 59-64.
[5]	汪琛, 王保平, 童林夙. 计算二维静电场的非正交有限差分算法[J]. 计算物理, 1997, 14(3): 305-310.
[6]	杨国伟, 关永贵. 静电偏转型摄像管聚焦偏转系统设计Ⅰ-场的计算[J]. 计算物理, 1993, 10(2): 146-154.