CHINESE JOURNAL OF COMPUTATIONAL PHYSICS ›› 1999, Vol. 16 ›› Issue (2): 183-191.

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Numerical simulation of implanted electrons transport in the materials

Zhang Chunlin, Wu Keyong, Hu Cuiying   

  1. Dept.of physics, Jinan University, Guangzhou 510632
  • Received:1997-10-07 Revised:1998-10-23 Online:1999-03-25 Published:1999-03-25

Abstract: Based on the model of the electron beam irradiating the matter having only single kind of atom and the elctron multiply scattering theory,this paper has constructed a scattering unit model mirroring the structure of the amprphous materials which have the characteristic of short range order but long range disorder.The electron energy loss distributions are calculated by means of Monte Carlo simulation and transport equation in the scattering unit model.In addition,the structure property of materials including several kinds of atoms are took into account.The calculatd results are given and discussed.

Key words: electron, amorphous, short range order, Monte Carlo simulation

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