EAST高约束运行条件下离散阿尔芬本征模的数值模拟

doi:10.19596/j.cnki.1001-246x.8636

摘要/Abstract

摘要：

运用磁流体力学数值模拟程序和磁流体力学-回旋动理学混合模拟程序对EAST(Experimental Advanced Superconducting Tokamak)装置上具有内部输运垒(ITB)高约束运行模式下的离散阿尔芬本征模(αTAE, α是等离子体压强梯度的参数)进行模拟研究。结果表明: 在EAST上ITB以内的芯部区域存在丰富的αTAE, 且在运行参数下多支αTAE被激发为不稳定模式。在EAST上预演的稳态运行方案中, αTAE分布在了更大的径向范围内, 强的负磁剪切, 减少了ITB局域内的αTAE。模拟对比了DIII-D装置和中国聚变工程试验堆(CFETR)上与EAST预演方案具有相似运行条件下的αTAE。结果发现与EAST上类似, 在DIII-D与CFETR中, 同样由于强的负磁剪切, 在ITB内的强磁剪切区域并不存在αTAE。在CFETR核心区域出现了更高频率的αTAE, 且在高能量粒子条件下激发出了更丰富的αTAE。

关键词: 阿尔芬本征模, 托卡马克, 不稳定性, 高能量粒子

Abstract:

In this paper, the instability of the discrete Alfvén eigenmodes (αTAEs, where α denotes a parameter of plasma pressure gradient) are simulated in the high performance plasma with internal transport barriers (ITBs) on the EAST. The simulation results show that there is an abundance of αTAEs on EAST, and it mainly locates in the core region within the ITB foot, where the temperature or the density gradient varies abruptly. Because the ITBs observed in the EAST are relatively localized and close to the core, the distribution of αTAEs in the radial radius is narrow.In the high performance scenario with localized magnetic shear reversal, the ITB region is closer to the plasma edge, the αTAEs locate in a larger radial region. However, in the ITB region, due to the strong negative magnetic shear, the αTAEs are only found near the ITB foot; the αTAEs frequency decreases as the pressure gradient decreases closer to the ITB foot. In addition, the αTAEs in the scenarios with localized magnetic shear reversal on the DIII-D and China Fusion Engineering Test Reactor (CFETR) are also compared, and it is similar to that on EAST, where the αTAEs do not exist in the strong magnetic shear region. The simulations on CFETR show that there are higher frequencies αTAEs in the core region and more abundant αTAEs are excited into unstable modes by energy particles.

Key words: Alfvén eigenmodes, tokamak, instabilities, energetic particles

朱万坡, 胡双辉, 欧阳学锋, 欧阳思杰, 兰源丹. EAST高约束运行条件下离散阿尔芬本征模的数值模拟[J]. 计算物理, 2023, 40(4): 461-472.

Wanpo ZHU, Shuanghui HU, Xuefeng OUYANG, Sijie OUYANG, Yuandan LAN. Discrete Alfvén Eigenmodes in High Performance Scenarios with ITBs on EAST[J]. Chinese Journal of Computational Physics, 2023, 40(4): 461-472.

图/表 11

图1 EAST#73126放电中，αTAE(1，0)模的实频和虚频特性沿ρ的分布

Fig.1 In EAST#73126 discharge, the distribution of the real and imaginary frequency of αTAE (1, 0) mode versus ρ

图2 EAST ρ=0.14处，(a)势阱，(b) αTAE(1，0)模和(c)αTAE(2，0)模的模结构(s=-0.12，α=1.32，ε0=0.2)

Fig.2 In EAST, (a) potentials V(θ) at ρ=0.14; mode structures of (b) αTAE(1, 0) mode and (c) αTAE(2, 0) (s=-0.12, α=1.32, ε0=0.2)

图3 αTAE的实频及增长率随vE/vA0的变化曲线

Fig.3 Real frequency and growth rates of αTAE with vE/vA0

图4 αTAE的实频及增长率随βE0的变化曲线

Fig.4 Real frequency and growth rates of αTAE with βE0

图5 (a) 和(b)分别是EAST#80307和EAST#80399放电参数(s，α)；(c)和(d)分别为对应两次放电中的αTAE(1，0)模的实频和虚频沿ρ的分布

Fig.5 Operating parameters (s, α) for (a) EAST#80307 discharge and (b) EAST#80399 discharge, respectively; distributions of the real and imaginary frequency of αTAE (1, 0) mode versus ρ in (c) EAST#80307 and (d) EAST#80399 discharge, respectively

图6 (a) αTAE的实频和增长率随vE/vA0的变化; (b) 势阱，(c) αTAE(3，0)模，(d) αTAE(2，0) 模，(e) αTAE(1，0)模被高能粒子激发后的模结构

Fig.6 (a) Real frequency and growth rate of αTAEs with vE/vA0; (b) potentials V(θ), (c) αTAE(3, 0), (d) αTAE(2, 0), (e) αTAE(1, 0) mode structure excited by energetic particles (s=-0.19, α=2.11, q=2.06)

图7 (a) 和(b)分别是EAST预演方案和DIII-D#159220放电的压强剖面；(c)和(d)是对应EAST和DIII-D中αTAE(1，0)模沿ρ的分布

Fig.7 Pressure profiles of (a) EAST preview scenario discharge and DIII-D#159220 discharge; distributions of αTAE (1, 0) mode versus ρ of (c) EAST and (d) DIII-D, respectively.

图8 (a) EAST装置上的运行参数(s，α)；(b) αTAE(1，0)模实频和虚频随磁剪切s的变化，其中α=2.14

Fig.8 (a) The operating parameters (s, α) in EAST; (b) the real and imaginary frequency of αTAE(1, 0) mode vary with magnetic shear s at for α=2.14

图9 (a) 和(b)分别为EAST在ρ=0.53和DIII-D在ρ=0.63处，αTAE的实频以及增长率随vE/vA0的变化曲线

Fig.9 For (a) EAST at ρ=0.53 and (b) DIII-D at ρ=0.63 the real frequency and growth rate of αTAE vary with vE/vA0

图10 (a) 方案1和(b)方案2中αTAE(1，0)模的实频和虚频沿ρ的分布

Fig.10 The distributions of the real and imaginary frequencies of αTAE(1, 0) modes along ρ for (a) scheme 1 and (b) scheme 2

图11 CFETR装置ρ=0.3处，(a) αTAE的实频和增长率随vE/ vA0的变化；(b) 势阱；(c) αTAE(4，0)模；(d) αTAE(3，0) 模；(e) αTAE(1，0)模；(f) αTAE(3，1)模；(g) αTAE(1，2)；(h) αTAE(1，4)被高能粒子激发后的模结构

Fig.11 In CFETR, (a) real frequency (─) and growth rate (┄) of αTAEs vary with vE/vA0 at ρ=0.3; (b) potentials V(θ); (c) αTAE(4, 0); (d) αTAE(3, 0), (e) αTAE(1, 0), (f) αTAE(3, 1), (g) αTAE(1, 2), (h) αTAE(1, 4)mode structure excited by energetic particles

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