计算物理 ›› 1997, Vol. 14 ›› Issue (S1): 417-418,416.

• 论文 • 上一篇    下一篇

电离辐射在半导体器件中引起的光电流的数值模拟

黄流兴   

  1. 西北核技术研究所, 西安 710024
  • 收稿日期:1997-03-05 修回日期:1997-05-07 出版日期:1997-12-25 发布日期:1997-12-25

NUMERICAL SIMULATION OF PHOTOCURRENT RESPONSE OF SEMICONDUCTOR DEVICES TO IONIZING RADIATION

Huang Liuxing   

  1. Northwest Institute of Nuclear Technology, Xian 710024
  • Received:1997-03-05 Revised:1997-05-07 Online:1997-12-25 Published:1997-12-25

摘要: 电离辐射在半导体中引起光电流问题是半导体器件辐照效应研究中一个带普遍性的课题,首先建立描述半导体中光电流过程的普遍性的物理模型,而后模拟一个实际pn结器件的光电流响应,给出模拟结果。

关键词: 光电流, 数值模拟, 电离辐射, 半导体器件

Abstract: The description of production and transient of photocurrent in semiconductor devices in ionzinong radiation environment is of great importance for Transient Radiation Effects on Electronics Systems(TREES). Physical models of generic description of photocurrent in semiconductors are proposed hare, photocurrent of an actual pn junction has been simulated numerically, and the simulation results are also presented.

Key words: photocurrent, numerical simulation, ionizing radiation, semiconductor devices

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